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| BC856 THRU BC859 Small Signal Transistors (PNP) SOT-23 FEATURES PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. .122 (3.1) .118 (3.0) .016 (0.4) 3 Especially suited for automatic insertion in Top View .056 (1.43) .052 (1.33) thick- and thin-film circuits. These transistors are subdivided into three groups A, B and C according to their current gain. The type BC856 is available in groups A and B, however, the types BC857, BC858 and BC859 can be supplied in all three groups. The BC859 is a low noise type. .045 (1.15) .037 (0.95) 1 2 max. .004 (0.1) .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) As complementary types, the NPN transistors BC846 ... BC849 are recommended. Case: SOT-23 Plastic Package Weight: approx. 0.008 g Marking code Type BC856A B BC857A B C BC858A B C MECHANICAL DATA .016 (0.4) .016 (0.4) .102 (2.6) .094 (2.4) Dimensions in inches and (millimeters) Marking 3A 3B 3E 3F 3G 3J 3K 3L Type BC859A B C Marking 4A 4B 4C Pin configuration 1 = Base, 2 = Emitter, 3 = Collector. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified Symbol Collector-Base Voltage BC856 BC857 BC858, BC859 BC856 BC857 BC858, BC859 BC856 BC857 BC858, BC859 -VCBO -VCBO -VCBO -VCES -VCES -VCES -VCEO -VCEO -VCEO -VEBO -IC -I CM -I BM I EM Ptot Tj TS Value 80 50 30 80 50 30 65 45 30 5 100 200 200 200 3101) 150 - 65 to +150 Unit V V V V V V V V V V mA mA mA mA mW C C Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Peak Base Current Peak Emitter Current Power Dissipation at TSB = 50 C Junction Temperature Storage Temperature Range 4/98 BC856 THRU BC859 ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified Symbol h-Parameters at -VCE = 5 V, -IC = 2 mA, f = 1 kHz Current Gain Current Gain Group A B C Input Impedance Current Gain Group A B C Output Admittance Current Gain Group A B C Reverse Voltage Transfer Ratio Current Gain Group A B C DC Current Gain at -VCE = 5 V, -IC = 10 A Current Gain Group A B C at -VCE = 5 V, -IC = 2 mA Current Gain Group A B C Thermal Resistance Junction to Substrate Backside Thermal Resistance Junction to Ambient Air Collector Saturation Voltage at -IC = 10 mA, -IB = 0.5 mA at -IC = 100 mA, -IB = 5 mA Base Saturation Voltage at -IC = 10 mA, -IB = 0.5 mA at -IC = 100 mA, -IB = 5 mA Base-Emitter Voltage at -VCE = 5 V, -IC = 2 mA at -VCE = 5 V, -IC = 10 mA Collector-Emitter Cutoff Current BC856 at -VCE = 80 V at -VCE = 50 V BC857 at -VCE = 30 V BC858, BC859 at -VCE = 80 V, Tj = 125 C BC856 at -VCE = 50 V, Tj = 125 C BC857 at -VCE = 30 V, Tj = 125 C BC858, BC859 at -VCB = 30 V at -VCB = 30 V, Tj = 150 C Gain-Bandwidth Product at -VCE = 5 V, -IC = 10 mA, f = 100 MHz 1) Min. Typ. Max. Unit hfe hfe hfe hie hie hie hoe hoe hoe hre hre hre - - - 1.6 3.2 6 - - - - - - 220 330 600 2.7 4.5 8.7 18 30 60 1.5 * 10-4 2 * 10-4 3 * 10-4 - - - 4.5 8.5 15 30 60 110 - - - - - - k k k S S S - - - hFE hFE hFE hFE hFE hFE RthSB RthJA -VCEsat -VCEsat -VBEsat -VBEsat -VBE -VBE -ICES -ICES -ICES -ICES -ICES -ICES -ICBO -ICBO fT - - - 110 200 420 - - - - - - 600 - - - - - - - - - - 90 150 270 180 290 520 - - 90 250 700 900 660 - 0.2 0.2 0.2 - - - - - 150 - - - 220 450 800 3201) 4501) 300 650 - - 750 800 15 15 15 4 4 4 15 5 - - - - - - - K/W K/W mV mV mV mV mV mV nA nA nA A A A nA A MHz Device on fiberglass substrate, see layout BC856 THRU BC859 ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified Symbol Collector-Base Capacitance at -VCB = 10 V, f = 1 MHz Noise Figure at -VCE = 5 V, -IC = 200 A, RG = 2 k, f = 1 kHz, f = 200 Hz BC856, BC857, BC858 BC859 Noise Figure at -VCE = 5 V, -IC = 200 A, RG = 2 k, f = 30...15000 Hz BC859 CCBO Min. - Typ. - Max. 6 Unit pF F F - - 2 1 10 4 dB dB F - 1.2 4 dB .30 (7.5) .12 (3) .04 (1) .08 (2) .04 (1) .08 (2) .59 (15) .47 (12) .03 (0.8) 0.2 (5) .06 (1.5) .20 (5.1) Dimensions in inches (millimeters) Layout for RthJA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in (0.3 mm) RATINGS AND CHARACTERISTIC CURVES BC856 THRU BC859 Collector-base cutoff current versus junction temperature nA 4 10 BC856...BC859 10 -ICBO 3 10 2 10 Test voltage -V : CBO equal to the given maximum value -V CEO typical maximum 10 -1 1 0 100 Tj 200 C RATINGS AND CHARACTERISTIC CURVES BC856 THRU BC859 Collector current versus base-emitter voltage Collector saturation voltage versus collector current mA 102 -V CE = 5 V T = 25 C amb 5 4 3 BC856...BC859 V 0.5 -IC -IB = 20 BC856...BC859 0.4 -VCEsat 0.3 -IC 2 10 5 4 3 2 0.2 1 5 4 3 2 T amb = 100 C 0.1 25 C -50 C 0 0.5 -V BE 1V 10-1 2 5 10-1 0 1 2 5 10 2 -IC 5 102 mA RATINGS AND CHARACTERISTIC CURVES BC856 THRU BC859 |
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